M396T1G63QJT-CCCM6 - Samsung 8GB PC2-3200 DDR2-400MHz ECC Registered CL3 276-Pin DIMM Quad Rank Memory Module

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Samsung

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M396T1G63QJT-CCCM6

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M396T1G63QJT-CCCM6 - Samsung 8GB PC2-3200 DDR2-400MHz ECC Registered CL3 276-Pin DIMM Quad Rank Memory Module

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$124.23
$101.00
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M396T1G63QJT-CCCM6 - Samsung 8GB PC2-3200 DDR2-400MHz ECC Registered CL3 276-Pin DIMM Quad Rank Memory Module

M396T1G63QJT-CCCM6 - Samsung 8GB PC2-3200 DDR2-400MHz ECC Registered CL3 276-Pin DIMM Quad Rank Memory Module

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Description

M396T1G63QJT-CCCM6 - Samsung 8GB PC2-3200 DDR2-400MHz ECC Registered CL3 276-Pin DIMM Quad Rank Memory Module

The Samsung M396T1G63QJT-CCCM6 is a 8 GB DDR2-400/PC2-3200 Very Low Profile (VLP) Registered DIMM (CDIMM) memory module caused for next-generation initiative servers and cloud substructure. Operating at 1.8V low voltage with DDR2-400/PC2-3200 specifications, this Quad Rank x4 module delivers improved bandwidth and power efficiency for modern server workloads. Designed with 276-pin RDIMM architecture and CL3 latency, it provides best signal integrity in multi-DIMM configurations while maintaining compatibility with Intel Xeon E5-2600 v3/v4 platforms. The space-saving VLP form factor is important for high-density 1U/2U rack servers, blade systems and cloud placements where thermal management and physical permission are critical. As an energy well-organized solution its reduced power consumption helps lower TCO in always on data center surroundings.

Key Features:

  • 8 GB DDR2-400/PC2-3200 memory capacity
  • Registered DIMM (CDIMM) with Quad Rank x4 organization
  • 1.8V low voltage process for improved power efficiency
  • CL3 column access strobe latency
  • 276-pin Very Low Profile (VLP) form factor
  • ECC configuration for compatible server platforms
  • Samsung quality assurance for server grade reliability
  • Improved for high-density server placements
  • Backward compatible with 1866MHz systems
  • RoHS compliant and ecologically friendly

Compatibility and Use Cases:

This Samsung memory module is specifically designed for Intel Xeon E5-2600 v3/v4 server platforms offering best performance in initiative surroundings. Ideal for virtualization hosts, cloud servers and database applications, its CDIMM design is mostly suited for high-density 1U/2U rack placements where space efficiency and reliable memory performance are critical requirements.

Why Choose Samsung M396T1G63QJT-CCCM6?

The Samsung M396T1G63QJT-CCCM6 offers server managers a reliable memory upgrade path for DDR4-based systems requiring Registered memory modules. Its VLP design allows placement in compact server configurations without losing performance, while the 1.8V process reduces power consumption compared to standard voltage modules. Manufactured by Samsung, a leader in memory technology this module experiences difficult testing to confirm compatibility and reliability in server settings. The combination of 2133MHz speed and registered design provides stable performance for virtualization, database applications and other memory-intensive capacities.

Details

Brand
Samsung
Weight
2.00 LBS
Memory Capacity
8 GB
Memory Technology
DDR2 SDRAM
Product Voltage
1.8V
RAM Speed
400 MHz
RAM Standard
DDR2-400/PC2-3200
Error Identifying
ECC
Signal Type
Registered
Column Access Strobe (CAS)
CL3
Rank
Quad Rank x4
Quantity of Pins
276-pin
RAM Genre
CDIMM